Experimental Drift Velocity Field in Transistor Devices

Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility-transistor using field-dependent drift velocity model

Undoped GaN-based metal-oxide-semiconductor high-electron-mobility-transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 μm up to 40 μm. With a two-dimensional numerical simulator, we report simulation results of the GaN-based MOS-HEMTs using field-dependent drift velocity model. A developed model, taking into account polarization-induc...

Field effect transistor nanobiosensors: State-of-the-art and key challenges as point of care testing devices

The existing health care systems focus on treating diseases rather than preventing them. Patients are generally not tested unless physiological symptoms are appeared. When they do get tested, the results often take several days and can be inconclusive if the disease is at an early stage. In order to facilitate the diagnostics process and make tests more readily available for patients, the conce...

Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor

Low-field mobilities for electrons in the channel of an Al0.15Ga0.85N/GaN heterostructure field-effect transistor are derived from direct current transistor characteristics. The dependencies of mobility on gate bias, sheet carrier concentration, and temperature are obtained. For negative gate bias voltages, mobility is found to increase monotonically with increasing sheet carrier concentration,...

Velocity, Silt and Larval Drift

Electron Drift Velocity in the μBooNE TPC

As the readout time associated with a trigger of μBooNE is proportional to the drift time, it is important to know the drift velocity precisely. Likewise, the reconstruction of track position from the drift time of ionization electrons depends on knowledge of the drift velocity. The nominal drift field in μBooNE is E = 500V/cm, and the peak electric field at the surface of the collection wires ...